Initial stages in the formation of PtSi on Si(111) as followed by photoemission and spectroscopic ellipsometry

被引：40

作者：

Ley, L ^{[1
]}

Wang, Y ^{[1
]}

Van, VN ^{[1
]}

Fisson, S ^{[1
]}

Souche, D ^{[1
]}

Vuye, G ^{[1
]}

Rivory, J ^{[1
]}

机构：

[1] UNIV PARIS 06,LAB OPT SOLIDES,URA CNRS 781,F-75252 PARIS 05,FRANCE

来源：

THIN SOLID FILMS | 1995年 / 270卷 / 1-2期

关键词：

ellipsometry; photoemission; platinum; silicon; silicides;

D O I：

10.1016/0040-6090(95)06860-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reaction of thin platinum layers with Si(lll) to form platinum silicides was monitored in situ by core level electron spectroscopy and spectroscopic ellipsometry, The chemical composition and stoichiometry of the reaction products were identified at crucial stages of the reaction via photoemission while the kinetics of the reaction could be followed via ellipsometry. Utilizing the optical constants of the reactants Pt and Si and the main reaction products PtSi and a Pt-rich Pt2Si (x similar to 2) an initial room temperature reaction of Pt and Si extending some nanometres into the Pt overlayer has been detected and the evolution of the ellipsometric angles during the reaction of Pt and Si at elevated temperatures could be modeled quantitatively.

引用

页码：561 / 566

页数：6

共 13 条

[1] Kimata, Denda, Fukomoto, Tsubouchi, Uematsu, Shibata, Higuchi, Saheki, Tsunoda, Kanno, Platinum Silicide Schottky-Barrier IR-CCD Image Sensors, Japanese Journal of Applied Physics, 21, (1982)
[2] Kosonocky, Shallcross, Villani, Groppe, 160 &amp
[3] #215
[4] 244 Element PtSi Schottky-barrier IR-CCD image sensor, IEEE Transactions on Electron Devices, 32 ED, 8, (1985)
[5] von der Ohe, Siebeneck, Suckow, Koniger, Platz, Senatori, SPIE Proc. on the Technologies for Optoelectronics, (1987)
[6] Cabanski, Schulz, Proc. SPIE Conf., (1991)
[7] Purtell, Hollinger, Rubloff, Ho, Schottky barrier formation at Pd, Pt, and Ni/Si(111) interfaces, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1 A, (1983)
[8] Chabal, Higashi, Raghavachari, Burrows, Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 7 A, (1989)
[9] Bell, Ley, Phys. Rev., 37 B, (1988)
[10] Vuye, Fisson, Nguyen Van, Wang, Rivory, Abeles, Thin Solid Films, 233, (1993)

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