RUO2/TIN-BASED STORAGE ELECTRODES FOR (BA,SR)TIO3 DYNAMIC RANDOM-ACCESS MEMORY CAPACITORS

被引：68

作者：

TAKEMURA, K ^{[1
]}

YAMAMICHI, S ^{[1
]}

LESAICHERRE, PY ^{[1
]}

TOKASHIKI, K ^{[1
]}

MIYAMOTO, H ^{[1
]}

ONO, H ^{[1
]}

MIYASAKA, Y ^{[1
]}

YOSHIDA, H ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

(BA; SR)TIO3; RUO2; TIN; DRAM; THIN FILM CAPACITOR; SPUTTERING;

D O I：

10.1143/JJAP.34.5224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sputtered (Ba, Sr)TiO3 (BST) thin film capacitors have been fabricated with thick RuO2/TiN-based storage electrodes and poly-Si contact plugs, and the electrical properties of the storage electrodes have been studied, The electrode height was higher than 450 nm and the contact size was 0.8 x 0.8 mu m(2). Resistance of the storage electrodes including contact plugs can be evaluated from the dispersion observed in capacitance-frequency measurements. TiN oxidation at the RuO2/TiN interface and native oxide at the TiN/Si contact contribute to the electrode resistance of RuO2/TiN electrodes. With increasing BST deposition temperature, the thickness of oxidized TIN in RuO2/TiN electrodes increases and the electrode resistance increases correspondingly. A Bu layer inserted at the RuO2/TiN interface, a TiN/TiSi2/Si junction and rapid thermal annealing in N-2 ambient of the TiN layer are eff effective ways to reduce the resistance of RuO2/TiN-based electrodes.

引用

页码：5224 / 5229

页数：6

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