LIFETIME AND CARRIER-CONCENTRATION PROFILE OF B+-IMPLANTED P-TYPE HGCDTE

被引：20

作者：

FRAENKEL, A

SCHACHAM, SE

BAHIR, G

FINKMAN, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.337514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3916 / 3922

页数：7

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