SURFACE AND INTERFACE PHONON AND PLASMON EXCITATIONS IN III-V SEMICONDUCTOR-MATERIALS

被引：16

作者：

EGDELL, RG

FLAVELL, WR

GRAYGRYCHOWSKI, ZJT

STRADLING, RA

JOYCE, BA

NEAVE, JH

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2AY,ENGLAND

[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1016/0368-2048(87)80066-X

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：177 / 187

页数：11

共 21 条

[1] A HIGH-RESOLUTION EELS STUDY OF FREE-CARRIER VARIATIONS IN H2+/H+ BOMBARDED (100)GAAS
DUBOIS, LH
SCHWARTZ, GP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 101 - 106
[2] SURFACE OPTICAL PHONONS AND HYDROGEN CHEMISORPTION ON POLAR AND NON-POLAR FACES OF GAAS, INP, AND GAP
DUBOIS, LH
SCHWARTZ, GP
[J]. PHYSICAL REVIEW B, 1982, 26 (02): : 794 - 802
[3] ALUMINUM SCHOTTKY-BARRIER FORMATION ON ARSENIC CAPPED AND HEAT CLEANED MBE GAAS(100)
EGLASH, SJ
WILLIAMS, MD
MAHOWALD, PH
NEWMAN, N
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 481 - 485
[4] EGRI I, 1983, SURF SCI, V128, P51, DOI 10.1016/0039-6028(83)90380-1
[5] OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
GRAYGRYCHOWSKI, ZJ
STRADLING, RA
EGDELL, RG
DOBSON, PJ
JOYCE, BA
WOODBRIDGE, K
[J]. SOLID STATE COMMUNICATIONS, 1986, 59 (10) : 703 - 706
[6] APPLICATION OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY TO MBE GROWN GAAS(100)
GRAYGRYCHOWSKI, ZJ
EGDELL, RG
JOYCE, BA
STRADLING, RA
WOODBRIDGE, K
[J]. SURFACE SCIENCE, 1987, 186 (03) : 482 - 498
[7] GRAYGRYCHOWSKI ZJT, IN PRESS SPECTROCHIM
[8] IBACH H, 1982, ELECTRON ENERGY LOSS, P73
[9] THEORETICAL ANALYSES OF EELS FROM AN N-TYPE INSB SURFACE
INAOKA, T
NEWNS, DM
EGDELL, RG
[J]. SURFACE SCIENCE, 1987, 186 (1-2) : 290 - 308
[10] MOLECULAR-BEAM EPITAXY
JOYCE, BA
[J]. REPORTS ON PROGRESS IN PHYSICS, 1985, 48 (12) : 1637 - 1697