PHOTOLUMINESCENCE FROM NARROW INAS-ALSB QUANTUM-WELLS

被引：23

作者：

BRAR, B

KROEMER, H

IBBETSON, J

ENGLISH, JH

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.

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页码：3303 / 3305

页数：3

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[1] INTERFACE ROUGHNESS SCATTERING IN INAS/ALSB QUANTUM-WELLS [J].

BOLOGNESI, CR ;

KROEMER, H ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1992, 61 (02) :213-215

[2] STRUCTURAL AND OPTICAL-PROPERTIES OF (100) INAS SINGLE-MONOLAYER QUANTUM-WELLS IN BULKLIKE GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

TAPFER, L ;

CINGOLANI, R ;

PLOOG, K ;

HOHENSTEIN, M ;

PHILLIPP, F .

PHYSICAL REVIEW B, 1990, 41 (18) :12599-12606

[3] QUASI-DIRECT NARROW GASB-ALSB (100) QUANTUM-WELLS [J].

BRAR, B ;

KROEMER, H ;

ENGLISH, J .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :752-754

[4] THE GROWTH OF (AL,GA)SB TILTED SUPERLATTICES AND THEIR HETEROEPITAXY WITH INAS TO FORM CORRUGATED-BARRIER QUANTUM-WELLS [J].

CHALMERS, SA ;

KROEMER, H ;

GOSSARD, AC .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :647-650

[5] ARE THERE TAMM-STATE DONORS AT THE INAS-AISB QUANTUM-WELL INTERFACE [J].

KROEMER, H ;

NGUYEN, C ;

BRAR, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1769-1772

[6] EFFECTS OF BARRIER THICKNESSES ON THE ELECTRON-CONCENTRATION IN NOT-INTENTIONALLY DOPED INAS-ALSB QUANTUM-WELLS [J].

NGUYEN, C ;

BRAR, B ;

KROEMER, H ;

ENGLISH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :898-900

[7] SURFACE DONOR CONTRIBUTION TO ELECTRON SHEET CONCENTRATIONS IN NOT-INTENTIONALLY DOPED INAS-ALSB QUANTUM-WELLS [J].

NGUYEN, C ;

BRAR, B ;

KROEMER, H ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1992, 60 (15) :1854-1856

[8] GROWTH OF INAS-ALSB QUANTUM-WELLS HAVING BOTH HIGH MOBILITIES AND HIGH-CONCENTRATIONS [J].

NGUYEN, C ;

BRAR, B ;

BOLOGNESI, CR ;

PEKARIK, JJ ;

KROEMER, H ;

ENGLISH, JH .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (02) :255-258

[9] EFFECTS OF INTERFACE LAYER SEQUENCING ON THE TRANSPORT-PROPERTIES OF INAS/ALSB QUANTUM-WELLS - EVIDENCE FOR ANTISITE DONORS AT THE INAS/ALSB INTERFACE [J].

TUTTLE, G ;

KROEMER, H ;

ENGLISH, JH .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :3032-3037