MEASUREMENT OF MINORITY-CARRIER LIFETIME IN GAAS AND GAAS1-XPX WITH AN INTENSITY-MODULATED ELECTRON-BEAM

被引：19

作者：

PIETZSCH, J ^{[1
]}

机构：

[1] TECH UNIV MUNICH,LEHRSTUHL TECH ELEKTR,D-8000 MUNICH 2,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1016/0038-1101(82)90138-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：295 / &

共 26 条

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