HIGH CONTRAST RATIO ELECTROABSORPTIVE GAINAS/INP QUANTUM WELL MODULATOR

被引：13

作者：

GUY, DRP

TAYLOR, LL

BESGROVE, DD

APSLEY, N

BASS, SJ

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 19期

关键词：

D O I：

10.1049/el:19880853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1253 / 1255

页数：3

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[4] HIGH-FREQUENCY INGAAS/INP MULTIPLE-QUANTUM-WELL BURIED-MESA ELECTROABSORPTION OPTICAL MODULATOR
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[5] LOW-LOSS INGAAS/INP MULTIPLE QUANTUM-WELL OPTICAL ELECTROABSORPTION WAVE-GUIDE MODULATOR
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[6] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES
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[7] QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS
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[J]. ELECTRONICS LETTERS, 1987, 23 (20) : 1048 - 1050
[8] LARGE ELECTROABSORPTION EFFECT IN GAINAS/INP MULTIPLE QUANTUM WELL (MQW) OPTICAL MODULATOR GROWN BY OMVPE
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[J]. ELECTRONICS LETTERS, 1988, 24 (14) : 840 - 841