THE OBSERVATION OF THE FRACTIONAL QUANTUM HALL-EFFECT IN A SINGLE (ALGA)AS/GAAS/(ALGA)AS QUANTUM-WELL

被引：5

作者：

WHITE, CRH

DAVIES, M

HENINI, M

DAVIDSON, BR

MAIN, PC

OWERSBRADLEY, JR

EAVES, L

HUGHES, OH

HEATH, M

SKOLNICK, MS

机构：

[1] Dept. of Phys., Nottingham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 07期

关键词：

D O I：

10.1088/0268-1242/5/7/027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fractional quantum Hall effect (FQHE) is observed at filling factors of nu =2/3, 4/3 and 5/3 for conduction electrons confined in a single (AlGa)As/GaAs/(AlGa)As quantum well of thickness 102 AA. The variation of mobility with carrier concentration following below band-gap illumination is also measured.

引用

页码：792 / 794

页数：3

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