DEVELOPMENT OF HYDROGENATED AMORPHOUS-SILICON SENSORS FOR DIAGNOSTIC-X-RAY IMAGING

被引：8

作者：

ANTONUK, LE

KIM, CW

BOUDRY, J

YORKSTON, J

LONGO, MJ

STREET, RA

机构：

[1] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 02期

关键词：

D O I：

10.1109/23.289367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Signal measurements with diagnostic quality X rays have been performed on photosensitive diodes fabricated from hydrogenated amorphous silicon. Such diodes exhibit high light collection and conversion efficiency and excellent radiation damage resistance and thus are candidates for x-ray imaging. Results of an examination of the linearity of the output signal with respect to x-ray exposure rate and of the signal size normalized to exposure rate are reported for various x-ray energies and phosphor screens. Such photodiodes are presently being incorporated into two-dimensional arrays of addressable sensors for real-time medical imaging.

引用

页码：636 / 640

页数：5

共 15 条

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