COMPLETE CHARACTERIZATION OF LASER-DIODE THERMAL CIRCUIT BY VOLTAGE TRANSIENT MEASUREMENTS

被引：14

作者：

PICCIRILLO, A ^{[1
]}

OLIVETI, G ^{[1
]}

CIAMPA, M ^{[1
]}

BAGNOLI, PE ^{[1
]}

机构：

[1] UNIV PISA,DIPARTIMENTO INGN INFORMAZ,I-56100 PISA,ITALY

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 03期

关键词：

THERMAL RESISTANCE; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The equivalent thermal circuit of laser diodes plus their dissipating structures was completely characterised using a method based on the measurement of device voltage transient behaviour under pulsed bias. The experiments performed on ridge type lasers with copper submount showed the contributions of the mounting configuration and the solder layer to the thermal resistance of the structure.

引用

页码：318 / 320

页数：3