LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF STRUCTURE OF SUCCESSIVELY DEPOSITED ORDERED LAYERS OF CD ON TI(0001) .1. 1ST LAYER

被引：28

作者：

SHIH, HD

JONA, F

JEPSEN, DW

MARCUS, PM

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

[2] IBM CORP,RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.15.5550

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5550 / 5560

页数：11

共 23 条

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[3] QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY USING COADSORPTION
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[7] STRUCTURE OF OVERLAYERS .2. SI ON MO[001]
IGNATIEV, A
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[J]. PHYSICAL REVIEW B, 1975, 11 (12): : 4780 - 4786
[8] ATOMIC ARRANGEMENT IN 1X1 STRUCTURE OF A SILICON-ORDERED MONOLAYER ON MO(001)
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 226 - 229
[9] MODEL FOR AUGER-ELECTRON SPECTROSCOPY OF SYSTEMS EXHIBITING LAYER GROWTH, AND ITS APPLICATION TO DEPOSITION OF SILVER ON NICKEL
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[J]. SURFACE SCIENCE, 1973, 36 (02) : 381 - 394
[10] Jepsen D W, 1971, COMPUTATIONAL METHOD, P416

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