INFRARED ABSORPTION BY EXCITONS AND THEIR ASSOCIATES IN SILICON

被引：8

作者：

ASHKINAD.BM

KRETSU, IP

PATRIN, AA

YAROSHET.ID

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 46卷 / 02期

关键词：

D O I：

10.1002/pssb.2220460205

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：495 / &

共 9 条

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[2]

Ashkinadze B. M., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2206

[3]

ASHKINADZE BM, 1971, FIZ TEKH POLUPROV, V5

[4]

ASNIN VM, 1970, ZH EKSPER TEOR FIZ L, V11, P99

[5]

BAGAEV VS, 1970, 10 P INT C SEM PHYS

[6]

BENOITAL.C, 1971, CR ACAD SCI B PHYS, V272, P236

CUTHBERT, JD .

PHYSICAL REVIEW B, 1970, 1 (04) :1552-&

[8]

KELDYSH LV, 1969, 9 P INT C SEM PHYS M

[9] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF GE [J].

MACFARLANE, GG ;

MCLEAN, TP ;

QUARRINGTON, JE ;

ROBERTS, V .

PHYSICAL REVIEW, 1957, 108 (06) :1377-1383