CLASS-A SIGE HBT POWER-AMPLIFIERS AT C-BAND FREQUENCIES

被引：15

作者：

ERBEN, U

WAHL, M

SCHUPPEN, A

SCHUMACHER, H

机构：

[1] Department on Electron Devices and Circuits, University of Ulm

[2] Daimler-Benz Research Centre Ulm, D-89013, Ulm

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 12期

关键词：

D O I：

10.1109/75.481852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter we report on the first experimental investigations of the power-handling capabilities of SiGe heterojunction bipolar transistors (HBT's) at C-band frequencies. Multifinger HBT's in common-emitter (CE) and common-base (CB) configuration were matched using high Q matching networks. At a frequency of 5.7 GHz the CE and the CB class A amplifier exhibit a 1-dB compression output power of 18 and 20 dBm, respectively. A power-added efficiency (PAE) of more than 30% and a output power density of 1 mW/mu m(2) at 4 V V-CB were observed.

引用

页码：435 / 436

页数：2

共 8 条

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