SURFACE AND SIZE EFFECTS FOR IMPURITIES IN SI CLUSTERS

被引：36

作者：

ESTREICHER, S

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.37.858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：858 / 863

页数：6

共 38 条

[1] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[2] TOTAL ENERGY OF ISOLATED POINT-DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1983, 28 (04) :2296-2298

[3] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[5] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[6] ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J].

CORBETT, JW ;

SAHU, SN ;

SHI, TS ;

SNYDER, LC .

PHYSICS LETTERS A, 1983, 93 (06) :303-304

[7] THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN AND OXYGEN [J].

DELEO, GG ;

FOWLER, WB ;

WATKINS, GD .

PHYSICAL REVIEW B, 1984, 29 (06) :3193-3207

[8]

DELEO GG, 1987, B AM PHYS SOC, V32, P841

[9] GROUND-STATES OF MOLECULES .39. MNDO RESULTS FOR MOLECULES CONTAINING HYDROGEN, CARBON, NITROGEN, AND OXYGEN [J].

DEWAR, MJS ;

THIEL, W .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (15) :4907-4917

[10] GROUND-STATES OF MOLECULES .41. MNDO RESULTS FOR MOLECULES CONTAINING BORON [J].

DEWAR, MJS ;

MCKEE, ML .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (16) :5231-5241

← 1 2 3 4 →