COMPARATIVE HALL MOBILITIES OF ION-IMPLANTED BORON AND IMPLANTED CARBON PLUS BORON IN INSULATING DIAMOND

被引：4

作者：

HEWETT, CA ^{[1
]}

DELAHOUSSAYE, PR ^{[1
]}

ROSER, M ^{[1
]}

ZEIDLER, JR ^{[1
]}

WILSON, RG ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 10期

关键词：

D O I：

10.1149/1.2069019

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Natural type IIa (insulating) diamonds were implanted at liquid nitrogen temperature with either boron or carbon plus boron. Van der Pauw resistivity and Hall effect measurements as a function of temperature were used to determine the effect of the implantation, in comparison with the unimplanted side of the sample. Implantation with carbon plus boron resulted in a carrier concentration more than an order of magnitude greater than that resulting from implantation with boron alone, but with a much lower hole mobility.

引用

页码：2977 / 2979

页数：3

共 14 条

[1] ELECTRICAL-PROPERTIES OF HYDROGENATED DIAMOND [J].