RECOGNITION OF D-DEFECTS IN SILICON SINGLE-CRYSTALS BY PREFERENTIAL ETCHING AND EFFECT ON GATE OXIDE INTEGRITY

被引：140

作者：

YAMAGISHI, H

FUSEGAWA, I

FUJIMAKI, N

KATAYAMA, M

机构：

[1] Res. and Dev. Center, Shin-Estu Handotai Co. Ltd., Gunma

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for revealing point defects in silicon single crystals has been investigated. D or A defects could be revealed by a preferential etching technique using Secco's etchant. Wedge-shaped flow patterns and etch pits were recognised in the D and A regions, respectively. The flow patterns were so characteristic that the D region could be distinguished very easily.

引用

页码：A135 / A140

页数：6

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