LINEWIDTH CONTROL IN 1-1 SR LITHOGRAPHY

被引：3

作者：

HIGASHIKAWA, I

KOGA, K

TANAKA, T

MORIGAMI, M

ITOH, T

机构：

[1] SORTEC Corp., Tsukuba-shi, Ibaraki, 300-42

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90033-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Linewidth controllability of a CA negative-tone resist, AZ-PN100, in the 1:1 SR lithography has been investigated. Experimental results show that the pattern feature is better in the underexposed region with larger gap dependence. At the 10 mum proximity gap, dose control within +/- 12.5% is required to replicate a 0.25 mum line of the 0.5 mum period grating pattern within +/-5% linewidth variation.

引用

页码：87 / 90

页数：4