THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS

被引：35

作者：

PERSKY, G

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90128-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1345 / &

共 8 条

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[6] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
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ASH, EA
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 30 (01) : 19 - +
[8] SPACE-CHARGE LIMITED EMISSION IN SEMICONDUCTORS
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