TUNNELING PROBABILITY IN GERMANIUM P-N JUNCTIONS

被引：36

作者：

FURUKAWA, Y

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.15.730

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：730 / 730

页数：1

共 5 条

[1] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[2] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[3] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES
HOLONYAK, N
LESK, IA
HALL, RN
TIEMANN, JJ
EHRENREICH, H
[J]. PHYSICAL REVIEW LETTERS, 1959, 3 (04) : 167 - 168
[4] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763
[5] MCAFEE, 1951, PHYS REV, V83, P650