ENHANCEMENT OF HOLE DRIFT VELOCITY IN AMORPHOUS AS2SE3 BY IODINE DOPING

被引:14
作者
PFISTER, G [1 ]
MELNYK, AR [1 ]
SCHARFE, ME [1 ]
机构
[1] XEROX CORP,WEBSTER RES LAB,WEBSTER,NY 14580
关键词
D O I
10.1016/0038-1098(77)90361-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:907 / 910
页数:4
相关论文
共 25 条
[1]   HOLE MOBILITY IN EVAPORATED LAYERS OF AS2S3. CDI2 [J].
BANERJI, J ;
HIRSCH, J .
SOLID STATE COMMUNICATIONS, 1974, 15 (05) :925-928
[2]   OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN CHALCOGENIDE GLASSES [J].
BISHOP, SG ;
STROM, U ;
TAYLOR, PC .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1346-1350
[3]   OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].
BISHOP, SG ;
STROM, U ;
TAYLOR, PC .
PHYSICAL REVIEW LETTERS, 1976, 36 (10) :543-547
[4]   DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS [J].
HARTKE, JL .
PHYSICAL REVIEW, 1962, 125 (04) :1177-&
[5]   CHARGE TRANSPORT AND PHOTOCONDUCTIVITY IN AMORPHOUS ARSENIC TRISULFIDE FILMS [J].
ING, SW ;
NEYHART, JH ;
SCHMIDLIN, F .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :696-+
[6]  
KASTNER MA, COMMUNICATION, P1303
[7]  
KOLOMIET.BT, 1966, FIZ TVERD TELA+, V8, P905
[8]   STRUCTURAL STUDIES OF GLASSY CUASSE2 AND CU-AS2SE3 ALLOYS [J].
LIANG, KS ;
BIENENSTOCK, A ;
BATES, CW .
PHYSICAL REVIEW B, 1974, 10 (04) :1528-1538
[9]   ELECTRON DRIFT MOBILITY IN ARSENIC-SELENIUM GLASSES [J].
MARSHALL, JM ;
FISHER, FD ;
OWEN, AE .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02) :419-428
[10]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996