ELECTROLUMINESCENCE IN GAASXP1-X, INXGA1-XP, AND ALXGA1-XP JUNCTIONS WITH X LESS THAN OR APPROXIMATELY EQUAL TO 0.01

被引：28

作者：

LOGAN, RA

DEAN, PJ

WHITE, HG

WIEGMANN, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.1660544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2328 / &

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[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
[2] ARCHER RJ, 1968, ELECTRONICS, V41, P74
[3] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
CUTHBERT, JD
THOMAS, DG
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
[4] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV
DEAN, PJ
KAMINSKY, G
ZETTERSTROM, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +
[5] NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE
DEAN, PJ
FAULKNER, RA
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (07) : 210 - &
[6] GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE
DEAN, PJ
GERSHENZON, M
KAMINSKY, G
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5332 - +
[7] DEAN PJ, TO BE PUBLISHED
[8] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP
DUMKE, WP
LORENZ, MR
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4668 - &
[9] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
GERSHENZON, M
LOGAN, RA
NELSON, DF
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
[10] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
GROVES, WO
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &

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