HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS

被引：401

作者：

KRIJN, MPCM

机构：

[1] Philips Res. Labs., Eindhoven

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 01期

关键词：

D O I：

10.1088/0268-1242/6/1/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Estimates of valence-band and conduction-band offsets for latticematched and pseudomorphic strained heterostructures of six technologically important III-V quaternary alloys are presented. Valence-band offsets are obtained via interpolation of the theory-based results of Van de Walle's 'model-solid' approach for the binary constituents. Estimates for band gap differences are obtained via interpolation of the experimental band gap energies of the ternary constituents. Adding the valence-band offset and band gap difference gives an estimate of the conduction-band offset. Band-edge effective masses at GAMMA are determined from a linear interpolation of the effective masses of the binary constituents, obtained from self-consistent ab initio band structure calculations. Results are shown to agree well with the outcome of experiments.

引用

页码：27 / 31

页数：5

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