VAPOR GROWTH OF CADMIUM TELLURIDE

被引：23

作者：

AKUTAGAWA, W

ZANIO, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 11卷 / 03期

关键词：

D O I：

10.1016/0022-0248(71)90084-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：191 / +

页数：1

共 16 条

[1] NUCLEAR DETECTORS FROM CADMIUM TELLURIDE GROWN FROM A TELLURIUM SOLVENT [J].

BELL, RO ;

HEMMAT, N ;

WALD, F .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (03) :241-&

[2] SIMPLE VERSTILE METHOD TO GROW CADMIUM-CHALCOGENIDE SINGLE CRYSTALS [J].

CORSINIMENA, A ;

ELLI, M ;

PAORICI, C ;

PELOSINI, L .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (03) :297-+

[3]

GILMAN JJ, 1966, ART SCIENCE GROWING

[4] VACUUM EVAPORATION OF CADMIUM TELLURIDE [J].

GLANG, R ;

KREN, JG ;

PATRICK, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :407-412

[5] ETCH PITS AND POLARITY IN CDTE CRYSTALS [J].

INOUE, M ;

TAKAYANAGI, S ;

TERAMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2578-&

[6]

KIEFER J, PRIVATE COMMUNICATIO

[7] ELECTRO-OPTIC CHARACTERISTICS OF CDTE AT 3.39 AND 10.6MU [J].

KIEFER, JE ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1969, 15 (01) :26-&

[8]

KYLE NR, TO BE PUBLISHED

[9] SHALLOW AND DEEP ACCEPTOR STATES IN CDTE [J].

LORENZ, MR ;

SEGALL, B .

PHYSICS LETTERS, 1963, 7 (01) :18-20

[10]

NOBEL DD, 1959, PHILIPS RES REP, V14, P361

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