The Production of Refractory Crystals by Vapour Transport Reactions

被引：2

作者：

Jeffes, J. H. E. ^{[1
]}

Alcock, C. B. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Met, London SW7, England

来源：

JOURNAL OF MATERIALS SCIENCE | 1968年 / 3卷 / 06期

关键词：

D O I：

10.1007/BF00757911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thermodynamic analysis is made of the conditions under which compounds of high melting point can be efficiently transported in the gas phase by means of volatile compounds of limited stability. The possibilities of transporting silicon carbide, tantalum silicides, and uranium borides by this means are discussed to illustrate the method of calculation. A simple graphical method of constructing simultaneous tangents to three matched integral free energy diagrams is illustrated.

引用

页码：635 / 642

页数：8