MOLECULAR-BEAM-EPITAXY GROWTH OF STRAINED GA1-XINXAS/ALINAS/INP AND APPLICATION TO 1.55-MU-M MULTI-QUANTUM-WELL LASERS

被引：3

作者：

NISHIKATA, K

SHIMIZU, H

HIRAYAMA, Y

MATSUDA, T

IWASE, F

IRIKAWA, M

机构：

[1] Yokohama R&D Laboratories, Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80154-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Dependence of critical layer thickness (h(c)) and photoluminescence (PL) intensity on growth temperature (T-g) was investigated for 1% compressively strained Ga0.32In(0.68)As/AlInAs on InP. We found. for the first time. a strong T-g dependence of h(c) in this system with h(c) of 24 nm at 500 degrees C and 14 nm at 530 degrees C. The PL intensity increased with T-g. reaching a maximum at 530 degrees C. We fabricated 1.55 mu m multi-quantum-well (MQW) lasers with 1% compressively strained wells under optimized growth conditions. Threshold current density as low as 1.08 kA/cm(2) at a cavity length of 800 mu m was obtained. This threshold current density is one of the lowest values obtained for 1.55 mu m AlGaInAs MQW lasers grown by molecular beam epitaxy (MBE).

引用

页码：1328 / 1332

页数：5

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