PHYSICAL-PROPERTIES OF (N+)SRTIO3 FILMS

[1] ALLON D, 1978, PHIL MAG B, V38, P381

[2] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 228 - 232

[3] BUTLER MA, 1979, J MATER SCI, V18, P1

[4] CAMPET G, 1980, NOUV J CHIM, V4, P501

[5] CAMPET G, IN PRESS J SOLID STA

[6] CAMPET G, IN PRESS ACTIVE PASS

[7] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496

[8] SPRAY-DEPOSITED HIGH-EFFICIENCY SNO2LN-SI SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 266 - 268

[9] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[10] GENIS A, 1980, 9TH P INT C EL ION B, P131

[1] ALLON D, 1978, PHIL MAG B, V38, P381

[2] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 228 - 232

[3] BUTLER MA, 1979, J MATER SCI, V18, P1

[4] CAMPET G, 1980, NOUV J CHIM, V4, P501

[5] CAMPET G, IN PRESS J SOLID STA

[6] CAMPET G, IN PRESS ACTIVE PASS

[7] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496

[8] SPRAY-DEPOSITED HIGH-EFFICIENCY SNO2LN-SI SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 266 - 268

[9] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[10] GENIS A, 1980, 9TH P INT C EL ION B, P131