APPLICATION OF KELVIN METHOD FOR OXIDE CHARGE EVALUATION IN SI-SIO2 STRUCTURES

被引：3

作者：

BUCHHEIM, G

JUNGHANS, B

LIPPMANN, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 02期

关键词：

D O I：

10.1002/pssa.2210440222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：585 / 591

页数：7

共 10 条

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OSWALD, R
OHRING, M
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[2] BOER JSW, 1973, REV SCI INSTRUM, V8, P1003
[3] BUCHHEIM G, UNPUBLISHED
[4] BUCHHEIM G, 1977, THESIS TH K MARX STA
[5] BUCHHEIM G, 1975, 20 INT WISS KOLL TH, P57
[6] ELECTRIC FIELDS AT SURFACE AND INTERFACE OF SIO2 FILMS ON SILICON
FOWKES, FM
BURGESS, TE
[J]. SURFACE SCIENCE, 1969, 13 (01) : 184 - &
[7] JUNGHANS B, 1971, PHYSIK HALBLEITEROBE, P39
[8] HETEROJUNCTION PROPERTIES OF OXIDISED SEMICONDUCTOR
LINDMAYE.J
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (06) : 523 - &
[9] Many A., 1965, SEMICONDUCTOR SURFAC
[10] SADOVNICHII AA, 1968, PRIB TEKH EKSPER, V5, P156