CONDITIONS FOR IN-SITU GROWTH OF BISRCACUO THIN-FILMS BY LASER DEPOSITION

被引：4

作者：

POULLAIN, G

DESFEUX, R

MURRAY, H

机构：

[1] Laboratoire de cristallographie et sciences des matériaux (URA CNRS 1318) ISMRA, F14050 Caen, boulevard Maréchal Juin

来源：

PHYSICA C | 1993年 / 214卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(93)90129-E

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting thin films of Bi 2212 have been deposited by laser ablation. The influence of the density of the target upon the composition of the film is described. The substrate temperature is shown to be very critical: the in-situ deposition of well crystallized films requires an accurate heating system control. The influence of the oxygen pressure during deposition is especially discussed. Our work indicates that the end-of-deposition part of the processing cannot sufficiently improve the oxidation of the films. Therefore we present preliminary results on a new way to increase the in-situ oxidation of the films: the plasma assisted laser deposition method. The best in-situ film shows a critical temperature (R=0) of 83 K.

引用

页码：195 / 203

页数：9

共 17 条

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