MODES OF FAILURE OF MOS DEVICES

被引:11
作者
ECCLESTON, W
PEPPER, M
机构
关键词
D O I
10.1016/0026-2714(71)90208-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:325 / +
页数:1
相关论文
共 32 条
[1]   PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES [J].
BALK, P ;
ELDRIDGE, JM .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1558-+
[2]  
BALK P, 1965 M EL SOC BUFF
[3]  
BESSER PJ, 1966, P S MANUFACTURING IN
[4]   ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J].
BLACK, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :338-&
[5]   EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].
CHOU, NJ ;
ELDRIDGE, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+
[6]  
ECCLESTON W, TO BE PUBLISHED
[7]  
ELDRIDGE JM, 1970, T NY ACAD SCI, V32, P13
[8]   CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].
FROHMANB.D ;
LENZLINGER, M .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+
[9]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[10]   AVALANCHE DRIFT INSTABILITY IN PLANAR PASSIVATED P-N JUNCTIONS [J].
GURTLER, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :980-+