A QUASI-2-DIMENSIONAL HEMT MODEL FOR MICROWAVE CAD APPLICATIONS

被引：24

作者：

DRURY, R

SNOWDEN, CM

机构：

[1] Microwave and Terahertz Technology Group, Department of Electrical and Electronic Engineering, The University of Leeds, Leeds

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new quasi-two-dimensional HEMT model has been developed that solves the physical device equations in a more rigorous fashion than previously reported, The model incorporates a quantum mechanical description of the free electron concentration, self-consistently solving the Schrodinger and Poisson equations, The influence of traps and incomplete donor ionization are also included, The conventional one-dimensional charge-control approach is shown to be inadequate for HEMT's and is replaced by a two-dimensional version that more accurately describes the channel dynamics under normal bias conditions. This allows the simulation to accurately model pinch-off characteristics, which are essential for digital, power and low-noise device characterization. The scheme also includes a detailed energy transport model, avalanche breakdown and gate conduction terms, The highly efficient model is applied to the de and microwave characterization of AlGaAs/GaAs and pseudomorphic HEMT's.

引用

页码：1026 / 1032

页数：7

共 11 条

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