REGROWTH AND DEFECT REDUCTION IN UNCAPPED SE+ IMPLANTED (100) GAAS AFTER PULSED ELECTRON-BEAM ANNEALING

被引：3

作者：

BARBIER, D ^{[1
]}

LAUGIER, A ^{[1
]}

DERUDET, B ^{[1
]}

PIVOT, J ^{[1
]}

机构：

[1] UNIV LYON 1,DPM,F-69622 VILLEURBANNE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 04期

关键词：

D O I：

10.1016/S0022-0248(87)80018-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：725 / 732

页数：8

共 15 条

[1]

BADAWI MH, 1980, LASER ELECTRON BEAM, P354

[2]

BAERI P, 1981, MATERIALS RES SOC P, V1, P39

[3]

BARBIER D, 1985, THESIS LYON

[4] NUMERICAL SOLUTION OF PHASE-CHANGE PROBLEMS [J].

BONACINA, C ;

COMINI, G ;

FASANO, A ;

PRIMICERIO, M .

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1973, 16 (10) :1825-1832

[5] THERMAL-MODEL OF PULSED ELECTRON-BEAM ANNEALING IN SILICON [J].

CHEMISKY, G ;

BARBIER, D ;

LAUGIER, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :215-220

[6]

Chu W. K., 1978, BACKSCATTERING SPECT

[7]

EISEN FH, 1980, MATERIALS RES SOC P, P309

[8]

LAUGIER A, 1984, MATERIALS RES SOC P, V23, P699

[9]

LICHTER BD, 1969, T METALL SOC AIME, V245, P1021

[10] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J].

MAYCOCK, PD .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :161-&

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