MOSSBAUER STUDIES IN THIN-FILMS OF FETE

被引：8

作者：

AGGARWAL, K ^{[1
]}

MENDIRATTA, RG ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,NEW DELHI 110029,INDIA

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.16.3908

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3908 / 3912

页数：5

共 18 条

[1]

AGGARWAL K, TO BE PUBLISHED

[2]

AGGARWAL K, 1976, THESIS INDIAN I TECH

[3] MOSSBAUER EFFECT IN SOME TELLURIUM COMPOUNDS [J].

ALBANESE, G ;

LAMBORIZIO, C ;

ORTALLI, I .

NUOVO CIMENTO B, 1967, 50 (01) :65-+

[4]

[Anonymous], [No title captured]

[5]

Boolchand P., 1974, MOSSBAUER EFFECT MET

[6]

Chopra K.L, 1969, THIN FILM PHENOMENON

[7] FREQUENCY SPECTRUM AND MOSSBAUER EFFECT IN THIN FILMS [J].

CORCIOVEI, A ;

GRECU, D ;

RADESCU, E .

ZEITSCHRIFT FUR PHYSIK, 1968, 209 (02) :134-+

[8]

DANON J, UNPUBLISHED

[9]

FANO V, 1971, 4TH P INT C MOSSB SP

[10]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700