共 3 条
- [1] KARAKUSHAN EI, 1961, SOV PHYS-SOL STATE, V3, P493
- [2] KARAKUSHAN EI, 1962, SOV PHYS-SOL STATE, V3, P1476
- [3] PARSHAD R, 1967, INDIAN J PURE AP PHY, V5, P23
OSCILLATORY MAGNETO-CURRENT IN FORWARD BIASED SEMICONDUCTOR JUNCTIONS
被引：3
作者：
KITCHEN, WJ
机构：
[1] Electronic Components Laboratory, United States Army Electronics Command, Fort Monmouth
关键词：
D O I：
10.1063/1.1652800
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An oscillatory magneto-current has been observed in forward biased p-n junctions of silicon and germanium, at both liquid nitrogen and room temperatures. © 1969 The American Institute of Physics.
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页码：248 / &
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