THEORY OF SHORT-PULSE GAIN SATURATION IN SEMICONDUCTOR-LASER AMPLIFIERS

被引：73

作者：

USKOV, A ^{[1
]}

MORK, J ^{[1
]}

MARK, J ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 05期

关键词：

D O I：

10.1109/68.136480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier heating and spectral hole burning are shown to have a strong influence on the amplification of ultrashort pulses using semiconductor laser amplifiers. Approximate analytical expressions for the effective saturation energy in different pulsewidth regimes are derived.

引用

收藏

页码：443 / 446

页数：4

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