Integration technology of ferroelectrics and the performance of the integrated ferroelectrics

被引：25

作者：

Shimada, Y ^{[1
]}

Nagano, Y ^{[1
]}

Fujii, E ^{[1
]}

Azuma, M ^{[1
]}

Uemoto, Y ^{[1
]}

Sumi, T ^{[1
]}

Judai, Y ^{[1
]}

Hayashi, S ^{[1
]}

Moriwaki, N ^{[1
]}

Nakane, J ^{[1
]}

Otsuki, T ^{[1
]}

deAraujo, CAP ^{[1
]}

McMillan, LD ^{[1
]}

机构：

[1] SYMETRIX CORP,COLORADO SPRINGS,CO 80918

来源：

INTEGRATED FERROELECTRICS | 1995年 / 11卷 / 1-4期

关键词：

D O I：

10.1080/10584589508013595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully incorporated the ferroelectric and the high dielectric constant capacitors into integrated circuits. The GaAs MMICs with BST capacitors have been widely used for cellular phones. The BST technology is also applied to a silicon CCD delayline processor for VCRs and camcorders. With respect to the ferroelectric technology with Y1, an experimentally fabricated 256k bit FeRAM has exhibited the remarkable performance of the 100 ns and 3V operation with a 1T/1C cell configuration dedicated for the FeRAM. These integrated ferroelectrics have been achieved by controlling the ferroelectric properties in thin films and incorporating the films into GaAs and silicon devices with outstanding process technology. Furthermore, we refer to the memory cell design technology which enables the FeRAM to work below 1V. Various advantages of low-voltage and high-speed operation inherent in integrated ferroelectrics will be emphasized on the intelligent microelectronics applications toward the next multimedia generation.

引用

页码：229 / 245

页数：17

共 19 条

[1]

ARITA K, 1994, IEICE T ELECTRON, VE77C, P392

[2] SI LSI PROCESS TECHNOLOGY FOR INTEGRATING FERROELECTRIC CAPACITORS [J].

ARITA, K ;

FUJII, E ;

SHIMADA, Y ;

UEMOTO, Y ;

NASU, T ;

INOUE, A ;

MATSUDA, A ;

OTSUKI, T ;

SUZUOKA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5397-5399

[3]

AZUMA M, 1992, P 4 ISIF, P109

[4] EFFECTS OF OPERATING-CONDITIONS ON THE FAST-DECAY COMPONENT OF THE RETAINED POLARIZATION IN LEAD-ZIRCONATE-TITANATE THIN-FILMS [J].

BENEDETTO, JM ;

MOORE, RA ;

MCLEAN, FB .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :460-466

[5] NANOCRYSTALLINE BARIUM-TITANATE - EVIDENCE FOR THE ABSENCE OF FERROELECTRICITY IN SOL-GEL DERIVED THIN-LAYER CAPACITORS [J].

FREY, MH ;

PAYNE, DA .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2753-2755

[6]

Fujii E., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P267, DOI 10.1109/IEDM.1992.307357

[7]

HAYASHI S, 1994, S VLSI TECHN

[8]

HUFFMAN M, 1994, IN PRESS P 6 INT S I

[9]

LESAICHERRE PY, 1994, EDM, P831

[10]

MCMILLAN LD, 1991, P 3 INT S INT FERR, P649

← 1 2 →