THE EFFECT OF RAPID THERMAL ANNEALING IN VACUUM ON THE PROPERTIES OF THIN SIO2-FILMS

被引：9

作者：

PASKALEVA, A

ATANASSOVA, E

BESHKOV, G

机构：

[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, 1784

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 05期

关键词：

D O I：

10.1088/0022-3727/28/5/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of rapid thermal annealing in vacuum on the properties of thermally grown SiO2 has been investigated by means of high-field Fowler-Nordheim tunnelling injection and breakdown field techniques. The results indicate that the rapid thermal annealing process anneals the original electron traps in the oxide but at the same time introduces a positive charge. These two mechanisms are a strong function of the technological history of the samples and of the oxide quality. Rapid thermal annealing in vacuum improves the properties of the as-grown oxides without conventional post-oxidation annealing in N-2 but degrades the oxides that are preliminarily annealed in N-2. The extent of the improvement (degradation) depends on the temperature of rapid annealing (1073-1473 K).

引用

页码：906 / 913

页数：8

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