THERMAL FILAMENTS IN VANADIUM DIOXIDE

被引:82
作者
BERGLUND, CN
机构
[1] Bell Telephone Laboratories, Inc., N. J., Murray Hill
关键词
D O I
10.1109/T-ED.1969.16773
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A relatively simple thin-film structure using vanadium dioxide is analyzed in detail to show that high-temperature, low-resistivity filaments can exist in VO2 under appropriate electrical bias. These filaments will dominate both the static and dynamic electrical behavior of the structure, giving rise to V-I characteristics similar to those expected from materials exhibiting current-controlled bulk negative resistivities. The analysis indicates that these filaments may not only provide electrical features important from a device point of view, but also provide a tool for the measurement of fundamental material properties and for studying the dynamics of the phase transition in VO2. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码:432 / +
页数:1
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