STABILITY OF TANTALUM NITRIDE THIN-FILM RESISTORS

被引：52

作者：

AU, CL ^{[1
]}

ANDERSON, WA ^{[1
]}

SCHMITZ, DA ^{[1
]}

FLASSAYER, JC ^{[1
]}

COLLINS, FM ^{[1
]}

机构：

[1] OHMTEK INC,NIAGARA FALLS,NY 14304

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1557/JMR.1990.1224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about -140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 A polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz. © 1990, Materials Research Society. All rights reserved.

引用

页码：1224 / 1232

页数：9