KINETICS AND MECHANISM OF OXIDATION OF SIGE - DRY VERSUS WET OXIDATION

[1] DEAL BE, 1988, SEMICONDUCTOR MATERI, P46

[2] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[3] FORMATION OF EPITAXIAL LAYERS OF GE ON SI SUBSTRATES BY GE IMPLANTATION AND OXIDATION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1337 - 1339

[4] NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 520 - 522

[5] IYER SS, 1988, 2ND P INT S SI MBE, V88, P114

[6] LEGOUES FK, 1989, APPL PHYS LETT, V54, P20

[7] LEGOUES FK, 1988, MATER RES SOC S P, V105, P313

[8] LEGOUES FK, 1989, J APPL PHYS, V65, P920

[1] DEAL BE, 1988, SEMICONDUCTOR MATERI, P46

[2] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[3] FORMATION OF EPITAXIAL LAYERS OF GE ON SI SUBSTRATES BY GE IMPLANTATION AND OXIDATION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1337 - 1339

[4] NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 520 - 522

[5] IYER SS, 1988, 2ND P INT S SI MBE, V88, P114

[6] LEGOUES FK, 1989, APPL PHYS LETT, V54, P20

[7] LEGOUES FK, 1988, MATER RES SOC S P, V105, P313

[8] LEGOUES FK, 1989, J APPL PHYS, V65, P920