LBIC ANALYSIS OF THE ELECTRICAL-ACTIVITY OF DISLOCATIONS IN CZ SILICON

被引：17

作者：

PIZZINI, S

GANDOLFI, A

FARINA, S

BRANCIFORTI, M

机构：

[1] Dipartimento di Chimica Fisica ed Elettrochimica, Gruppo Nazionale di Struttura della Materia, 20133 Milano

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 7卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(90)90011-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On boron-doped, CZ silicon samples, having an average oxygen content of 1018 atoms cm-3, the influence of thermal annealing in controlled atmospheres on the electrical activity of dislocations was investigated using the light-beam-induced current technique, while the segregation of oxygen was followed using Fourier transform infrared spectroscopy. It was found that the electrical activity of dislocations is small or negligible until oxide precipitation occurs, indicating that a point defect cloud, originated as a consequence of the oxide phase formation and frozen around dislocations during the consequent cooling down of the samples, is responsible for their room temperature electrical activity. © 1990.

引用

页码：69 / 82

页数：14

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