JONCTIONS DE GERMANIUM P-N PLASTIQUEMENT DEFORMEES

被引:3
作者
BERNARD, M
LEDUC, B
机构
关键词
D O I
10.1016/0022-3697(60)90142-6
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:168 / 169
页数:2
相关论文
共 7 条
[1]  
BERNARD M, 1957, J ELECTRONICS, V2, P579
[2]  
BERNARD M, 1956, SEMICONDUCTEURS PHOS, P344
[3]   EFFECT OF DISLOCATIONS ON MINORITY CARRIER LIFETIME IN GERMANIUM [J].
KULIN, SS ;
KURTZ, AD .
ACTA METALLURGICA, 1954, 2 (02) :354-356
[4]   ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
MCKAY, KG ;
MCAFEE, KB .
PHYSICAL REVIEW, 1953, 91 (05) :1079-1084
[5]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241
[6]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
[7]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489