LASER PROCESSING OF CARBON-IMPLANTED CU, NI, AND CO CRYSTALS - AN ATTEMPT TO GROW DIAMOND FILMS

被引：24

作者：

LEE, ST ^{[1
]}

CHEN, S ^{[1
]}

AGOSTINELLI, J ^{[1
]}

BRAUNSTEIN, G ^{[1
]}

HUANG, LJ ^{[1
]}

LAU, WM ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,LONDON N6A 5B7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon films have been prepared by laser-pulse treatment of single crystals of copper, nickel, and cobalt, which have been previously implanted at room temperature with 50 keV carbon ions to a fluence of 1 X 10(18) cm-2. Characterization using Raman scattering, Auger spectroscopy, and transmission electron microscopy showed that the films consisted of amorphous carbon and microcrystalline graphite but not diamond. In addition, an appreciable amount of substrate material was found present embedded in the carbon films.

引用

页码：2213 / 2215

页数：3

共 16 条

[11] DIAMOND SYNTHESIS - INTERNAL GROWTH DURING C+ ION-IMPLANTATION [J].