PHONON-INDUCED ELECTRON LOCALIZATION AND MAGNETIC-FIELD EFFECTS IN A DOUBLE-QUANTUM DOT

被引：8

作者：

NAKANO, A ^{[1
]}

KALIA, RK ^{[1
]}

VASHISHTA, P ^{[1
]}

机构：

[1] UNIV TOKYO, DEPT COMP SCI, TOKYO 113, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant tunneling of an electron through a double quantum dot is studied in the presence of phonon scattering and magnetic field. The coupled time-dependent Schrodinger equations for an electron and longitudinal-optical phonons are solved numerically within a mean-field approximation. Phonon-induced electron localization is observed. A magnetic field reduces the buildup time of electron probability density in the dots, but increases the decay time associated with the resonant tunneling. Inelastic processes increase the decay time, but their effect on the buildup time depends on the strength of the magnetic field.

引用

页码：3470 / 3472

页数：3

共 20 条

[1] LIFETIME FOR RESONANT TUNNELING IN A TRANSVERSE MAGNETIC-FIELD [J].