IMPURITIES - CURSE AND BLESSING FOR CRYSTAL GROWERS

被引：2

作者：

FOX, DK

MAZELSKY, R

机构：

[1] Westinghouse Science and Technology Center, Pittsburgh, PA 15235

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 01期

关键词：

Mercury Compounds - Semiconducting Gallium Arsenide - Impurities;

D O I：

10.1016/0022-0248(90)90280-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The indespensability of high-quality source materials research and development has been established for many years. However, because contributors to this field are diverse and communication of research results is often fragmented, transfer of the new knowledge is very slow. This paper describes how increasing source purity has improved the quality of several crystals, and how the addition of controlled impurities has decreased the defect density in these crystals. Experimental evidence is presented in this paper. © 1990.

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页码：1 / 5

页数：5

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