NATURE, ORIGIN AND EFFECT OF DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS

被引：65

作者：

BOOKER, GR

TITCHMARSH, JM

FLETCHER, J

DARBY, DB

HOCKLY, M

ALJASSIM, M

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(78)90470-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：407 / 425

页数：19

共 7 条

[1] BOOKER GR, 1976, 6TH P EUR C EL MICR, V1, P198
[2] SCANNING ELECTRON-MICROSCOPE EBIC AND CL MICROGRAPHS OF DISLOCATIONS IN GAP
DARBY, DB
BOOKER, GR
[J]. JOURNAL OF MATERIALS SCIENCE, 1977, 12 (09) : 1827 - 1833
[3] DARBY DB, 1978, 9TH P INT C EL MICR, V1, P136
[4] FLETCHER J, 1978, 9TH P INT C EL MICR, V1, P128
[5] PETTIT HR, 1971, EMAG C P, P290
[6] CARRIER RECOMBINATION AT DISLOCATIONS IN EPITAXIAL GALLIUM-PHOSPHIDE LAYERS
TITCHMARSH, JM
BOOKER, GR
HARDING, W
WIGHT, DR
[J]. JOURNAL OF MATERIALS SCIENCE, 1977, 12 (02) : 341 - 346
[7] TITCHMARSH JM, 1976, 6TH P EUR C EL MICR, V1, P494