E-BEAM DIRECT-WRITE IN A DRY-ETCHED RECESS GATE HEMT PROCESS FOR GAAS/ALGAAS CIRCUITS

被引：18

作者：

HULSMANN, A

KAUFEL, G

KOHLER, K

RAYNOR, B

SCHNEIDER, J

JAKOBUS, T

机构：

[1] Fraunhofer-Institute for Applied Solid State Physics Tullastr., Freiburg

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Coupled FET logic; Demultiplexer; Direct; E-beam lithography; Gaas dry etching; Gaas/AlGaAs; Ielta doped HEMT; Recess gate;

D O I：

10.1143/JJAP.29.2317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a technology to fabricate enhancement and depletion high electron mobility transistors (E- and D-HEMTs) with sub-0.5 µm gatelengths using e-beam direct-write lithography. The gates are recessed by dry etching. The recess is stopped on 30 Å AlGaAs layers for E- and D-field effect transistors (FETs) respectively. We have extensively investigated the double layer resist technique for direct-write to improve the reliability of 0.3 µm electron-beam (E-beam) lithography. Ring oscillators using direct coupled FET logic (DCFL) have been measured indicating delay times of 16 ps per stage. © 1990 IOP Publishing Ltd.

引用

页码：2317 / 2320

页数：4