HIGH-POWER OPERATION OF BROAD-AREA LASER-DIODES WITH GAAS AND ALGAAS SINGLE QUANTUM-WELLS FOR ND-YAG LASER PUMPING

被引：50

作者：

SHIGIHARA, K

NAGAI, Y

KARAKIDA, S

TAKAMI, A

KOKUBO, Y

MATSUBARA, H

KAKIMOTO, S

机构：

[1] Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.89974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied in detail the dependencies of the main lasing characteristics on the facet reflectivity for GaAs and AlGaAs single-quantum-well (SQW) separate-confinement heterostructure (SCH) broad-area laser diodes (LD's). We identified conditions for the facet reflectivity to achieve optimum values. Under those conditions, we obtained maximum output powers of 2.9 and 2.6 W for GaAs-SQW and AlGaAs-SQW single-stripe LD's, respectively, for 150-mu-m stripe width, lasing at about 808 nm under a continuous-wave (CW) condition. Moreover, those LD's have been stably operating for over 2000 h under the condition of 1 W constant output power with automatic power control circuits at 45-degrees-C in CW operation.

引用

页码：1537 / 1543

页数：7

共 27 条

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