PBS PHOTODIODES FABRICATED BY SB+ION IMPLANTATION

被引：15

作者：

DONNELLY, JP ^{[1
]}

HARMAN, TC ^{[1
]}

FOYT, AG ^{[1
]}

LINDLEY, WT ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90193-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：529 / 534

页数：6

共 7 条

[1] PARAELECTRIC BEHAVIOR OF PBTE [J].

BATE, RT ;

CARTER, DL ;

WROBEL, JS .

PHYSICAL REVIEW LETTERS, 1970, 25 (03) :159-+

[2]

BATE RT, 1971, 10 P INT C PHYS SEM

[3] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].

DONNELLY, JP ;

LINDLEY, WT ;

FOYT, AG ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :279-&

[4] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].

DONNELLY, JP ;

HARMAN, TC ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :259-&

[5]

DONNELLY JP, 1972, MAR P C PHYS 4 6 COM

[6] NGE-PGAAS HETEROJUNCTIONS [J].

RIBEN, AR ;

FEUCHT, DL .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1055-&

[7]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

← 1 →