ION-IMPLANTED FET FOR POWER APPLICATIONS

被引：24

作者：

LECROSNIER, DP ^{[1
]}

PELOUS, GP ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN, LANNION, FRANCE

来源：

关键词：

D O I：

10.1109/T-ED.1974.17870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 118

页数：6

共 12 条

[1] BUCHANAN B, 1967, MAY COLL INT APPL FA
[2] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DRANGEID, KE
SOMMERHALDER, R
WALTER, W
[J]. ELECTRONICS LETTERS, 1970, 6 (08) : 228 - +
[3] GRIDISTOR - FIELD-EFFECT TRANSISTOR FOR AN ULTRA-HIGH-FREQUENCY POWER AMPLIFIER
DURAND, P
LAPLANCHE, J
[J]. ELECTRONICS LETTERS, 1972, 8 (12) : 306 - +
[4] Furukawa S., 1972, JAPAN J APPL PHYS, V11
[5] JOHNSON WS, 1969, PROJECTED RANGE STAT
[6] KENNEDY DP, 1970, IBM J RES DEVELO MAR
[7] KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P1088
[8] LECROSNIER D, 1970, SEP EUR C ION IMPL R
[9] NAPOLI LS, 1973, ISSCC DIG TECH PAPER, P82
[10] SIGMUND P, 1967, MAY COLL INT APPL FA