INVESTIGATIONS OF RADIATION-DAMAGE PRODUCTION IN ION-IMPLANTED SILICON

被引：20

作者：

GLASER, E

GOTZ, G

SOBOLEV, N

WESCH, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 69卷 / 02期

关键词：

D O I：

10.1002/pssa.2210690221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：603 / 614

页数：12

共 28 条

[1]

BAITHER D, COMMUNICATION

[2] EFFECT OF IRRADIATION TEMPERATURE ON SI AMORPHIZATION PROCESS [J].

BARANOVA, EC ;

GUSEV, VM ;

MARTYNENKO, YV ;

HAIBULLIN, IB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03) :157-162

[3]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[4]

CHATTERTON LT, 1970, P INT C ION IMPLANTA

[5]

CHATTERTON LT, 1971, RAD EFF, V7, P129

[6]

CHATTERTON LT, 1971, RAD EFF, V8, P77

[7] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

TITLE, RS ;

BRODSKY, MH ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[8] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[9] LATTICE LOCATION AND ATOMIC MOBILITY OF IMPLANTED BORON IN SILICON [J].

FRANK, WFJ ;

BERRY, BS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (02) :105-111

[10] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

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